mar-27-2003 1 bb669/bb689... silicon tuning diode for vhf 2-band-hyperband-tv-tuners very high capacitance ratio low series resistance excellent uniformity and matching due to "in-line" matching assembly procedure bb669 bb689 BB689-02V type package configuration l s (nh) marking bb669 bb689 BB689-02V sod323 scd80 sc79 single single single 1.8 0.6 0.6 1 ee e maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 30 v peak reverse voltage ( r 5k ) v rm 35 forward current i f 20 ma operating temperature range t op -55 ... 150 c storage temperature t stg -55 ... 150
mar-27-2003 2 bb669/bb689... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 30 v v r = 30 v, t a = 85 c i r - - - - 10 200 na electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 2 v, f = 1 mhz v r = 25 v, f = 1 mhz v r = 28 v, f = 1 mhz c t 51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 61.5 47.2 3 2.9 pf capacitance ratio v r = 1 v, v r = 28 v, f = 1 mhz c t1 / c t28 18 20.9 23.2 - capacitance ratio v r = 2 v, v r = 25 v, f = 1 mhz c t2 / c t25 14.5 15.5 17 capacitance matching 1) v r = 1 v, v r = 28 v, f = 1 mhz c t / c t - - 2 % series resistance v r = 8 v, f = 470 mhz r s - 0.85 - 1 for details please refer to application note 047
mar-27-2003 3 bb669/bb689... diode capacitance c t = (v r ) f = 1mhz 0 4 8 12 16 20 24 v 30 v r 0 5 10 15 20 25 30 35 40 45 50 pf 60 c t temperature coefficient of the diode capacitance t cc = ( v r ) 10 0 10 1 10 2 v v r -5 10 -4 10 -3 10 1/c tc c reverse current i r = ( v r ) t a = parameter 10 0 10 1 10 2 v v r -1 10 0 10 1 10 2 10 3 10 pa i r 25c 85c
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